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 ZXTN25100BFH 100V, SOT23, medium power transistor
Summary
BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m PD = 1.25W Complementary part number ZXTP25100BFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * High power dissipation SOT23 package Low saturation voltage 170V forward blocking voltage
E
Applications
* * * Lamp relay and solenoid drivers General switching in automotive and industrial applications Motor drive and control
E C B
Ordering information
Device ZXTN25100BFHTA Reel size (inches) 7 Tape width (mm) 8
Pinout - top view
Quantity per reel 3,000
Device marking
021
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTN25100BFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(b) Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit 170 170 100 6 7 3 9 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTN25100BFH
Characteristics
Issue 1 - May 2006
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ZXTN25100BFH
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current Symbol BVCBO BVCEX BVCEO BVECX BVECO BVEBO ICBO Min. 170 170 100 6 6 7 Typ. 220 210 120 7 8.4 8 <1 <1 40 100 70 200 Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage Static forward current transfer ratio VBE(on) hFE 100 50 940 890 200 85 20 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO t(d) t(r) t(s) t(f) 160 9.4 16 55 677 95
300 s; duty cycle 2%.
Max. Unit Conditions V IC = 100 A IC = 100 A, RBE < 1k -1V < VBE < 0.25V V V V V 50 20 100 50 55 135 80 250 1050 1000 300 nA A nA nA IC = 10mA (*) IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100 A, IE = 100 A VCB = 136V VCB = 136V, Tamb= 100C VCE = 136V; RBE < 1k -1V < VBE < 0.25V VEB = 5.6V or or
Collector emitter cut-off current ICEX Emitter cut-off current Collector-emitter saturation voltage IEBO VCE(sat)
mV I = 0,5A, I = 50mA(*) C B mV I = 0,5A, I = 10mA(*) C B mV I = 1A, I = 100mA(*) C B mV I = 3A, I = 300mA(*) C B mV I = 3A, I = 300mA(*) C B mV I = 3A, V = 2V(*) C CE IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 3A, VCE = 2V(*) MHz IC = 100mA, VCE = 5V f = 100MHz
20
pF ns ns ns ns
VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 500mA, IB1 = IB2= 50mA.
NOTES: (*) Measured under pulsed conditions. Pulse width
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTN25100BFH
Typical characteristics
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTN25100BFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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